Laser-induced photothermal reflectance investigation of silicon damaged by arsenic ion implantation: A temperature study
Date
1989Source
Applied Physics LettersVolume
54Issue
24Pages
2392-2394Google Scholar check
Metadata
Show full item recordAbstract
Laser-induced photothermal reflectance (PTR) measurements of arsenic-implanted silicon are reported. The photothermal signals as a function of temperature are presented for both annealed and as-implanted silicon films. The ability to monitor the dependence of signal on doping and on the temperature suggests a novel nondestructive means for characterization of implanted layers. The latter dependence has been qualitatively explained in terms of the temperature variation of the thermal wave effect.