Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism
Date
2014Author
Zervos, MatthewMihailescu, C. N.
Giapintzakis, Ioannis
Luculescu, C. R.
Florini, N.
Komninou, Ph
Kioseoglou, J.
Othonos, Andreas S.
ISSN
2166-532XSource
APL MaterialsVolume
2Issue
5Google Scholar check
Metadata
Show full item recordAbstract
Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by using In:Sn source weight ratios > 1:9 while below this we observe the emergence of tetragonal rutile SnO2 and suppression of In2O3 permitting compositional and structural tuning from SnO2 to In2O3 which is accompanied by a blue shift of the photoluminescence spectrum and increase in carrier lifetime attributed to a higher crystal quality and Fermi level position. © 2014 Author(s).