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dc.contributor.authorZervos, Matthewen
dc.contributor.authorOthonos, Andreas S.en
dc.contributor.authorTsokkou, Demetraen
dc.contributor.authorKioseoglou, J.en
dc.contributor.authorPavlidou, E.en
dc.contributor.authorKomninou, P.en
dc.creatorZervos, Matthewen
dc.creatorOthonos, Andreas S.en
dc.creatorTsokkou, Demetraen
dc.creatorKioseoglou, J.en
dc.creatorPavlidou, E.en
dc.creatorKomninou, P.en
dc.date.accessioned2019-12-02T15:34:51Z
dc.date.available2019-12-02T15:34:51Z
dc.date.issued2012
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/59236
dc.source.urihttps://nls.ldls.org.uk/welcome.html?ark:/81055/vdc_100024751299.0x000013
dc.subjectSolidsen
dc.subjectSolid state physicsen
dc.subjectIndustrial applicationsen
dc.titleStructural properties of SnO2 nanowires and the effect of donor like defects on its charge distributionen
dc.typeinfo:eu-repo/semantics/article
dc.description.startingpage1
dc.description.endingpageonline
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>ID: 1160en
dc.description.notesIn: Physica status solidi, Vol. 210, no. 1 (Jan. 2013), p.226-229.en
dc.description.notesSummary: Abstract Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 µm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density of the SnO2 NWs measured by THz absorption spectroscopy was found to be n = (3.3 ± 0.4) × 1016 cm−3. Based on this we have determined the one‐dimensional (1D) sub‐band energies, overall charge distribution and band bending via the self‐consistent solution of the Poisson–Schrödinger equations in cylindrical coordinates and in the effective mass approximation. We find that a high density of 1018–1019 cm−3 donor‐like defect related states is required to obtain a line density of 0.7 × 109 close to the measured value by taking the Fermi level to be situated ≈0.7 eV below the conduction band edge at the surface which gives a surface depletion shell thickness of 15 nm. We discuss the origin of the donor‐like states that are energetically located in the upper half of the energy band gap as determined by ultrafast, time‐resolved absorption–transmission spectroscopy.</p>en
dc.contributor.orcidOthonos, Andreas S. [0000-0003-0016-9116]
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]
dc.gnosis.orcid0000-0003-0016-9116
dc.gnosis.orcid0000-0002-6321-233X


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