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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
Zervos, Matthew; Othonos, Andreas S. (2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
Zervos, Matthew; Othonos, A. (2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Article
High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition
Zervos, Matthew; Papageorgiou, P.; Othonos, A. (2010)Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...