| dc.contributor.author | Stavrinides, S. G. | en |
| dc.contributor.author | Antoniades, I. P. | en |
| dc.contributor.author | Georgiou, Julius | en |
| dc.contributor.author | Hatzikraniotis, E. | en |
| dc.creator | Stavrinides, S. G. | en |
| dc.creator | Antoniades, I. P. | en |
| dc.creator | Georgiou, Julius | en |
| dc.creator | Hatzikraniotis, E. | en |
| dc.date.accessioned | 2021-01-26T09:45:22Z | |
| dc.date.available | 2021-01-26T09:45:22Z | |
| dc.date.issued | 2019 | |
| dc.identifier.issn | 0167-9317 | |
| dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/63185 | |
| dc.description.abstract | In this paper, the experimental study and confirmation of the memristive behavior demonstrated by nanowires made of a smart alloy, namely NiTi, are presented. Further contribution to the characterization of the proposed novel NiTi memristor, included measurements in the ac domain, confirming the memristive nature of these NiTi wires/devices. These measurements included the device's response to triangular current excitation, as well as to pulse driving. In all cases, a study of the noise registered has taken place. According to the theory, since NiTi's memristive behavior is depended on its temperature, it is classified as an extended memristor. | en |
| dc.language.iso | en | en |
| dc.source | Microelectronic Engineering | en |
| dc.source.uri | http://www.sciencedirect.com/science/article/pii/S0167931719301832 | |
| dc.title | NiTi memristive behavior | en |
| dc.type | info:eu-repo/semantics/article | |
| dc.identifier.doi | 10.1016/j.mee.2019.111026 | |
| dc.description.volume | 216 | |
| dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
| dc.author.department | Τμήμα Ηλεκτρολόγων Μηχανικών και Μηχανικών Υπολογιστών / Department of Electrical and Computer Engineering | |
| dc.type.uhtype | Article | en |
| dc.source.abbreviation | Microelectronic Engineering | en |
| dc.contributor.orcid | Georgiou, Julius [0000-0002-7474-5449] | |
| dc.gnosis.orcid | 0000-0002-7474-5449 | |
