DEFECTS CHARACTERIZATION OF ARSENIC IMPLANTED SILICON BY AC HALL EFFECT MEASUREMENTS.
Date
1986ISBN
0-931837-37-5Publisher
Materials Research SocSource
Materials Research Society Symposia ProceedingsMaterials Issues in Silicon Integrated Circuit Processing.
Volume
71Pages
167-172Google Scholar check
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AC and DC Hall effects measurements as a function of temperature (77-300K) and frequency (1Hz-100KHz) have been performed to characterize implanted Silicon films. This technique enables the determination of the annihilation processes of defects in such layers as a function of temperature of isochronal annealings (300 degree C to 1100 degree C during 1 hour). The experimental results are discussed with respect to proper transport models based on short and long range disorder considerations in order to find out the features of defects and inhomogeneities arising from implantation and their thermal annihilation after isochronal annealing.