Browsing by Subject "Nanowires"

Now showing items 21-40 of 75

    • Article  

      Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition 

      Zervos, Matthew; Othonos, A. (2011)
      Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
    • Article  

      Fabrication, characterization and applications of novel nanoheater structures 

      Gu, Z.; Cui, Q.; Chen, J.; Buckley, J.; Ando, T.; Erdeniz, D.; Wong, P.; Hadjiafxenti, A.; Epaminonda, P.; Gunduz, I. E.; Rebholz, Claus; Doumanidis, C. C. (2013)
      Nanoheaters are reactive nanostructures that can generate localized heat through controlled ignition. Besides the widely used nanofoil structure with multiple alternative Al-Ni layers, various new nanostructures have been ...
    • Article  

      Gallium hydride vapor phase epitaxy of GaN nanowires 

      Zervos, Matthew; Othonos, Andreas S. (2011)
      Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
    • Article  

      Gallium hydride vapor phase epitaxy of GaN nanowires 

      Zervos, Matthew; Othonos, A. (2011)
      Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
    • Article  

      High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition 

      Zervos, Matthew; Papageorgiou, Polina; Othonos, Andreas S. (2010)
      Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
    • Article  

      High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition 

      Zervos, Matthew; Papageorgiou, P.; Othonos, A. (2010)
      Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
    • Article  

      Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2 

      Zervos, Matthew; Othonos, Andreas S. (2010)
      High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...
    • Article  

      Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2 

      Zervos, Matthew; Othonos, A. (2010)
      High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...
    • Article  

      An investigation into the conversion of In2O3 into InN nanowires 

      Papageorgiou, Polina; Zervos, Matthew; Othonos, Andreas S. (2011)
      Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
    • Article  

      An investigation into the conversion of In2O3 into InN nanowires 

      Papageorgiou, P.; Zervos, Matthew; Othonos, A. (2011)
      Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
    • Article  

      Long-range charge transport in single G-quadruplex DNA molecules 

      Livshits, G. I.; Stern, A.; Rotem, D.; Borovok, N.; Eidelshtein, G.; Migliore, A.; Penzo, E.; Wind, S. J.; Di Felice, R.; Skourtis, Spiros S.; Cuevas, J. C.; Gurevich, L.; Kotlyar, A. B.; Porath, D. (2014)
      DNA and DNA-based polymers are of interest in molecular electronics because of their versatile and programmable structures. However, transport measurements have produced a range of seemingly contradictory results due to ...
    • Conference Object  

      Magnetic domain-wall racetrack memory for high density and fast data storage 

      Zhao, W. S.; Zhang, Y.; Trinh, H. -P; Klein, J. -O; Chappert, C.; Mantovan, R.; Lamperti, A.; Cowburn, R. P.; Trypiniotis, Theodossis; Klaui, M.; Heinen, J.; Ocker, B.; Ravelosona, D. (2012)
      The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple ...
    • Article  

      The nitridation of ZnO nanowires 

      Zervos, Matthew; Karipi, C.; Othonos, Andreas S. (2012)
      ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
    • Article  

      The nitridation of ZnO nanowires 

      Zervos, Matthew; Karipi, C.; Othonos, A. (2012)
      ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
    • Conference Object  

      Optical response of II-VI ZnSe nanowires 

      Ruda, H. E.; Philipose, U.; Saxena, A.; De Souza, C.; Nair, S.; Salfi, J.; Shik, A.; Othonos, Andreas S.; Lioudakis, Emmanouil E.; Tsokkou, Demetra; Zhong, L.; Fernandes, C. (2010)
      II-VI nanowires offer a unique combination of properties for developing blue/UV optoelectronic devices. Key to realizing this potential is managing the nanowire growth process to ensure appropriate properties are realized. ...
    • Article  

      Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission 

      Zervos, Matthew; Othonos, Andreas S.; Gianetta, V.; Nassiopoulou, Androula Galiouna (2016)
      We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
    • Article  

      Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission 

      Zervos, Matthew; Othonos, A.; Gianetta, V.; Nassiopoulou, A. G. (2016)
      We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
    • Article  

      Physical constraints on charge transport through bacterial nanowires 

      Polizzi, N. F.; Skourtis, Spiros S.; Beratan, David N. (2012)
      Extracellular appendages of the dissimilatory metal-reducing bacterium Shewanella oneidensis MR-1 were recently shown to sustain currents of 10 10 electrons per second over distances of 0.5 microns [El-Naggar et al., Proc. ...
    • Article  

      Polymeric nanowires and nanopillars fabricated by template wetting 

      Kokonou, M.; Ioannou, G.; Rebholz, Claus; Doumanidis, C. C. (2013)
      Template wetting constitutes a common technique for the fabrication of elongated polymeric nanostructures such as nanorods, nanotubes, and nanowires. It is based on the infiltration of polymeric solutions inside the nanopores ...
    • Article  

      Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping 

      Zervos, Matthew (2013)
      The properties of the core-shell p-n junction in GaAs nanowires have been investigated via the self-consistent solution of the Poisson-Schrödinger equations in cylindrical coordinates and the effective mass approximation ...