Optical response of II-VI ZnSe nanowires

Abstract

II-VI nanowires offer a unique combination of properties for developing blue/UV optoelectronic devices. Key to realizing this potential is managing the nanowire growth process to ensure appropriate properties are realized. Taking ZnSe as an example, we report on the influence of growth conditions (namely, growth temperature and constituent flux ratio) on optimizing the luminescence response. It is shown that native defects ultimately dictate properties including steady state photoluminescence, ultrafast optical response and even nonlinear behavior. We demonstrate how careful control over materials can enable the realization of a state of the art photo-detector based on such nanowires. ©The Electrochemical Society.