Browsing by Subject "Ultra-fast"
Now showing items 1-15 of 15
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Article
Analysis of the excited-state absorption spectral bandshape of oligofluorenes
(2010)We present ultrafast transient absorption spectra of two oligofluorene derivatives in dilute solution. These spectra display a photoinduced absorption band with clear vibronic structure, which we analyze rigorously using ...
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Article
Excitation dynamics of a low bandgap silicon-bridged dithiophene copolymer and its composites with fullerenes
(2012)We report on excitation dynamics in pristine and bulk heterojunction films of the low bandgap silicon-bridged dithiophene copolymer poly[(4,4′-bis(2- ethylhexyl)dithieno[3,2-b:2′, 3′-d]silole)-2,6-diyl-alt-(4,7-bis(2- ...
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Article
Modulating unimolecular charge transfer by exciting bridge vibrations
(2009)(Figure Presented) Ultrafast UV-vibrational spectroscopy was used to investigate how vibrational excitation of the bridge changes photoinduced electron transfer between donor (dimethylaniline) and acceptor (anthracene) ...
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Article
Optical properties of organic semiconductor blends with near-infrared quantum-dot sensitizers for light harvesting applications
(2011)We report an optical investigation of conjugated polymer (P3HT)/fullerene (PCBM) semiconductor blends sensitized by near-infrared absorbing quantum dots (PbS QDs). A systematic series of samples that include pristine, ...
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Conference Object
Optical response of II-VI ZnSe nanowires
(2010)II-VI nanowires offer a unique combination of properties for developing blue/UV optoelectronic devices. Key to realizing this potential is managing the nanowire growth process to ensure appropriate properties are realized. ...
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Article
Spatial dependence of ultrafast carrier recombination centers of phosphorus-implanted and annealed silicon wafers
(2002)In this letter, the spatial dependence of the carrier recombination centers induced in phosphorus-implanted and annealed silicon wafers have been examined. Ultrafast time-resolved reflectivity measurements of a set of ...
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Article
Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
(2013)Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...
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Article
Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
(2013)Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...
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Article
Ultrafast dynamics of localized and delocalized polaron transitions in P3HT/PCBM blend materials: The effects of PCBM concentration
(2009)Nowadays, organic solar cells have the interest of engineers for manufacturing flexible and low cost devices. The considerable progress of this nanotechnology area presents the possibility of investigating new effects from ...
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Article
Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
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Article
Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
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Article
Ultrafast time-resolved spectroscopy of In2 O3 nanowires
(2009)Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...
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Article
Ultrafast time-resolved spectroscopy of In2 O3 nanowires
(2009)Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...
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Article
Ultrafast time-resolved spectroscopy of Si nanocrystals embedded in SiO2 matrix
(2009)In this work, we present a comprehensive study of ultrafast transient photoinduced absorption of silicon nanocrystals (NCs) embedded in SiO2 matrix. The samples under investigation are single monolayers of Si-NCs embedded ...
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Article
Ultrafast time-resolved spectroscopy of ZnSe nanowires: Carrier dynamics of defect-related states
(2009)In recent years, ZnSe nanowires have been widely investigated for their potential applications in optoelectronics. A typical room temperature photoluminescence spectrum of ZnSe nanowires grown by vapor-liquid-solid growth ...