Browsing by Subject "Nanowires"

Article

Carrier dynamics and conductivity of SnO 2 nanowires investigated by time-resolved terahertz spectroscopy

Tsokkou, D.; Othonos, A.; Zervos, Matthew (2012)

THz spectroscopy has been applied to investigate the photo-induced and intrinsic conductivity in SnO 2 nanowires using the Drude-Smith model. The refractive index of the nanowires was found to decrease from 2.4 to 2.1 with ...

Article

Carrier dynamics in InS nanowires grown via chemical vapor deposition

Othonos, A.; Zervos, Matthew (2010)

Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...

Article

Carrier dynamics in Β-Ga2O3 nanowires

Othonos, A.; Zervos, Matthew; Christofides, C. (2010)

Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...

Article

Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition

Othonos, A.; Zervos, Matthew (2009)

Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...

Article

Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cells

Zervos, Matthew; Vasile, E.; Vasile, E.; Othonos, A. (2017)

Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires have been obtained via the deposition of Pb over Sn:In2O3 nanowires and post growth processing under H2S between 100 C-200 C and 300 C-500 C respectively. The ...

Article

Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation

Zervos, Matthew; Pelekanos, N. T. (2008)

A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...

Article

Current Transport Properties of CuS/Sn:In2O3 versus CuS/SnO2 Nanowires and Negative Differential Resistance in Quantum Dot Sensitized Solar Cells

Zervos, Matthew; Vasile, E.; Karageorgou, E.; Othonos, A. (2016)

The structural, optical, and electrical transport properties of nanowires obtained by the deposition of Cu over Sn doped In2O3 and SnO2 nanowires followed by processing under H2S between 100 and 500°C have been investigated ...

Article

Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers

Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)

Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...

Article

Delta(δ)-doping of semiconductor nanowires

Zervos, Matthew (2013)

The electronic sub-band structure of single δ-layers in GaAs nanowires have been determined via the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The spread and sheet ...

Article

Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires

Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)

Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...

Article

Electronic properties of core-shell nanowire resonant tunneling diodes

Zervos, Matthew (2014)

The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP ...

Article

Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires

Zervos, Matthew; Feiner, L.-F. (2004)

The numerical self-consistent solution of the Poisson-Schrodinger equations in cylindrical coordinates for calculating electronic states in the effective mass approximation was implemented. High accuracy and rapid convergence ...

Article

Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition

Zervos, Matthew; Othonos, A. (2011)

Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...

Article

Fabrication, characterization and applications of novel nanoheater structures

Gu, Z.; Cui, Q.; Chen, J.; Buckley, J.; Ando, T.; Erdeniz, D.; Wong, P.; Hadjiafxenti, A.; Epaminonda, P.; Gunduz, I. E.; Rebholz, Claus; Doumanidis, C. C. (2013)

Nanoheaters are reactive nanostructures that can generate localized heat through controlled ignition. Besides the widely used nanofoil structure with multiple alternative Al-Ni layers, various new nanostructures have been ...

Article

Gallium hydride vapor phase epitaxy of GaN nanowires

Zervos, Matthew; Othonos, A. (2011)

Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...

Article

High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition

Zervos, Matthew; Papageorgiou, P.; Othonos, A. (2010)

Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...

Article

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

Zervos, Matthew; Othonos, A. (2010)

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...

Article

An investigation into the conversion of In2O3 into InN nanowires

Papageorgiou, P.; Zervos, Matthew; Othonos, A. (2011)

Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...

Article

The nitridation of ZnO nanowires

Zervos, Matthew; Karipi, C.; Othonos, A. (2012)

ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...

Article

Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission

Zervos, Matthew; Othonos, A.; Gianetta, V.; Nassiopoulou, A. G. (2016)

We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...