Browsing by Author "Zervos, Matthew"
Now showing items 21-40 of 100
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Article
Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE
Georgakilas, A.; Mikroulis, S.; Cimalla, V.; Zervos, Matthew; Kostopoulos, A.; Komninou, Ph; Kehagias, Th; Karakostas, Th (2001)The nitridation of the (0001) sapphire surface by a nitrogen rf-plasma source used in GaN molecular beam epitaxy has been investigated. Auger electron spectroscopy measurements were used to estimate the extent of the ...
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Article
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Travlos, A.; Luculescu, C. R. (2015)Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
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Article
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
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Article
Electronic properties of core-shell nanowire resonant tunneling diodes
Zervos, Matthew (2014)The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP ...
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Article
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
Zervos, Matthew; Feiner, L.-F. (2004)The numerical self-consistent solution of the Poisson-Schrodinger equations in cylindrical coordinates for calculating electronic states in the effective mass approximation was implemented. High accuracy and rapid convergence ...
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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
Zervos, Matthew; Othonos, Andreas S. (2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
Zervos, Matthew; Othonos, A. (2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Article
Epitaxial highly ordered Sb:SnO2 nanowires grown by the vapor liquid solid mechanism on m-, r- and a-Al2O3
Zervos, Matthew; Lathiotakis, N.; Kelaidis, N.; Othonos, Andreas; Tanasa, E.; Vasile, E. (2019)Epitaxial, highly ordered Sb:SnO2 nanowires were grown by the vapor–liquid–solid mechanism on m-, r- and a-Al2O3 between 700 °C and 1000 °C using metallic Sn and Sb with a mass ratio of Sn/Sb = 0.15 ± 0.05 under a flow of ...
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Article
Epitaxially Oriented Sn:In2O3 Nanowires Grown by the Vapor–Liquid–Solid Mechanism on m-, r-, a-Al2O3 as Scaffolds for Nanostructured Solar Cells
Charalampous, Andreas; Zervos, Matthew; Kioseoglou, Joseph; Tsagaraki, Katerina; Androulidaki, Maria; Konstantinidis, George; Tanasă, Eugenia; Vasile, Eugeniu (2019)We have grown highly directional, epitaxial Sn:In2O3 nanowires via the vapor–liquid–solid mechanism on m-, r- and a-Al2O3 between 800 and 900 °C at 1 mbar. The Sn:In2O3 nanowires have the cubic bixbyite crystal structure ...
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Article
Experimental observation of the de haas–van alphen effect in a multiband quantum-well sample
Shepherd, R. A.; Elliott, M.; Herrenden-Harker, W. G.; Zervos, Matthew; Morris, P. R. (1999)We report measurements of magnetic quantum oscillations (the de Haas–van Alphen effect) in a quantum well containing more than one subband. The Fourier transform of the magnetization oscillations shows the expected frequencies ...
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Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
Othonos, A.; Zervos, Matthew; Tsokkou, D. (2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
Othonos, Andreas S.; Zervos, Matthew; Tsokkou, Demetra (2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Article
Gallium hydride vapor phase epitaxy of GaN nanowires
Zervos, Matthew; Othonos, Andreas S. (2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
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Article
Gallium hydride vapor phase epitaxy of GaN nanowires
Zervos, Matthew; Othonos, A. (2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
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Article
High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition
Zervos, Matthew; Papageorgiou, Polina; Othonos, Andreas S. (2010)Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
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Article
High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition
Zervos, Matthew; Papageorgiou, P.; Othonos, A. (2010)Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
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Book Chapter
Hybrid metal nanoparticle-semiconductor nanowire assemblies: Synthesis, properties and applications
Krasia-Christoforou, T.; Zervos, Matthew (Nova Science Publishers, Inc., 2013)Hybrid, semiconductor nanowire - metal nanoparticle assemblies have been investigated extensively in the context of nanotechnology for the development of novel sensors, solar cells, memory, energy storage and catalysis ...
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Article
Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2
Zervos, Matthew; Othonos, Andreas S. (2010)High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...
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Article
Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2
Zervos, Matthew; Othonos, A. (2010)High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...
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Article
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
Zervos, Matthew; Xenogianni, C.; Deligeorgis, G.; Androulidaki, M.; Savvidis, P. G.; Hatzopoulos, Z.; Pelekanos, N. T. (2006)InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...