Browsing by Author "Kurebayashi, H."

Now showing items 1-8 of 8

    • Article  

      Electric control of the spin Hall effect by intervalley transitions 

      Okamoto, N.; Kurebayashi, H.; Trypiniotis, Theodossis; Farrer, I.; Ritchie, D. A.; Saitoh, E.; Sinova, J.; Mašek, J.; Jungwirth, T.; Barnes, C. H. W. (2014)
      Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and using spin ...
    • Article  

      Electrical determination of the spin relaxation time of photoexcited electrons in GaAs 

      Kurebayashi, H.; Trypiniotis, Theodossis; Lee, K.; Easton, S.; Ionescu, A.; Farrer, I.; Ritchie, D. A.; Bland, J. A. C.; Barnes, C. H. W. (2010)
      Spin-dependent transport for photoexcited electrons in an epitaxial Fe/GaAs interface was characterized from 5 to 300 K. The presence of spin-dependent transport was confirmed at all the measured temperatures and the spin ...
    • Article  

      Electrically tunable spin injector free from the impedance mismatch problem 

      Ando, K.; Takahashi, S.; Ieda, J.; Kurebayashi, H.; Trypiniotis, Theodossis; Barnes, C. H. W.; Maekawa, S.; Saitoh, E. (2011)
      Injection of spin currents into solids is crucial for exploring spin physics and spintronics. There has been significant progress in recent years in spin injection into high-resistivity materials, for example, semiconductors ...
    • Article  

      Initial/final state selection of the spin polarization in electron tunneling across an epitaxial FeGaAs (001) interface 

      Kurebayashi, H.; Steinmuller, S. J.; Laloë, J. B.; Trypiniotis, Theodossis; Easton, S.; Ionescu, A.; Yates, J. R.; Bland, J. A. C. (2007)
      Spin dependent electron transport across epitaxial FeGaAs (001) interfaces has been investigated using photoexcitation techniques. Spin filtering is observed in the forward bias regime and its sign is switched by using ...
    • Article  

      Numerical calculation model for spin-dependent transport of photoexcited electrons across Fe/GaAs(0 0 1) interfaces 

      Kurebayashi, H.; Trypiniotis, Theodossis; Lee, K.; Moutafis, C.; Easton, S.; Ionescu, A.; Bland, J. A. C.; Barnes, C. H. W. (2010)
      abs Spin-dependent transport of photogenerated electrons across Fe/GaAs(0 0 1) interfaces is calculated using a one-dimensional electron transport model. Creation of spin-polarized electrons by photoexcitation in this model ...
    • Article  

      Spin current depolarization under high electric fields in undoped InGaAs 

      Okamoto, N.; Kurebayashi, H.; Harii, K.; Kajiwara, Y.; Beere, H.; Farrer, I.; Trypiniotis, Theodossis; Ando, K.; Ritchie, D. A.; Barnes, C. H. W.; Saitoh, E. (2011)
      Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure ...
    • Article  

      Spin polarization control through resonant states in an Fe/GaAs Schottky barrier 

      Honda, S.; Itoh, H.; Inoue, J.; Kurebayashi, H.; Trypiniotis, Theodossis; Barnes, C. H. W.; Hirohata, A.; Bland, J. A. C. (2008)
      Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin ...
    • Article  

      Spin transport in germanium at room temperature 

      Shen, C.; Trypiniotis, Theodossis; Lee, K. Y.; Holmes, S. N.; Mansell, R.; Husain, M.; Shah, V.; Li, X. V.; Kurebayashi, H.; Farrer, I.; De Groot, C. H.; Leadley, D. R.; Bell, G.; Parker, E. H. C.; Whall, T.; Ritchie, D. A.; Barnes, C. H. W. (2010)
      Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent ...