Browsing by Author "Luculescu, C. R."

Now showing items 1-7 of 7

    • Article  

      Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Luculescu, C. R.; Florini, N.; Komninou, Ph; Kioseoglou, J.; Othonos, Andreas S. (2014)
      Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...
    • Article  

      Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Luculescu, C. R.; Florini, N.; Komninou, Ph; Kioseoglou, J.; Othonos, A. (2014)
      Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...
    • Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
    • Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
    • Article  

      Picosecond ultrafast pulsed laser deposition of SrTiO3 

      Pervolaraki, M.; Mihailescu, C. N.; Luculescu, C. R.; Ionescu, P.; Dracea, M. D.; Pantelica, D.; Giapintzakis, John (2015)
      SrTiO3 particle-composed films were grown on Si substrates via picosecond ultrafast pulsed laser deposition. We have investigated the effect of laser pulse repetition rate (0.2-8.2 MHz) and fluence (0.079-1.57 J cm-2) on ...
    • Article  

      Surface passivation and conversion of SnO2 to SnS2 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Luculescu, C. R. (2015)
      SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
    • Article  

      Surface passivation and conversion of SnO2 to SnS2 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Luculescu, C. R. (2015)
      SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...