• Conference Object  

      Doping studies of n-type CsBi4Te6 thermoelectric materials 

      Lane, M. A.; Ireland, J. R.; Brazis, P. W.; Kyratsi, Theodora; Chung, D. Y.; Kanatzidis, M. G.; Kannewurf, C. R. (Affiliation: Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United StatesCorrespondence Address: Lane, M.A.Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United States, 2001)
      We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements ...