Doping studies of n-type CsBi4Te6 thermoelectric materials
AuthorLane, M. A.
Ireland, J. R.
Brazis, P. W.
Chung, D. Y.
Kanatzidis, M. G.
Kannewurf, C. R.
PublisherAffiliation: Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United States
Correspondence Address: Lane, M.A.
Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United States
SourceProceedings - IEEE International Symposium on Circuits and Systems
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We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.