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dc.contributor.authorLane, M. A.en
dc.contributor.authorIreland, J. R.en
dc.contributor.authorBrazis, P. W.en
dc.contributor.authorKyratsi, Theodoraen
dc.contributor.authorChung, D. Y.en
dc.contributor.authorKanatzidis, M. G.en
dc.contributor.authorKannewurf, C. R.en
dc.creatorLane, M. A.en
dc.creatorIreland, J. R.en
dc.creatorBrazis, P. W.en
dc.creatorKyratsi, Theodoraen
dc.creatorChung, D. Y.en
dc.creatorKanatzidis, M. G.en
dc.creatorKannewurf, C. R.en
dc.date.accessioned2019-05-06T12:24:02Z
dc.date.available2019-05-06T12:24:02Z
dc.date.issued2001
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48571
dc.description.abstractWe have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.en
dc.language.isoengen
dc.publisherAffiliation: Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United Statesen
dc.publisherCorrespondence Address: Lane, M.A.en
dc.publisherDept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United Statesen
dc.sourceProceedings - IEEE International Symposium on Circuits and Systemsen
dc.subjectThermal effectsen
dc.subjectThermoelectricityen
dc.subjectSemiconductor dopingen
dc.subjectElectric power factoren
dc.subjectCesium compoundsen
dc.subjectDopantsen
dc.titleDoping studies of n-type CsBi4Te6 thermoelectric materialsen
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.description.volume4
dc.description.startingpageZ751
dc.description.endingpageZ756
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeConference Objecten
dc.contributor.orcidKyratsi, Theodora [0000-0003-2916-1708]
dc.description.totalnumpagesZ751-Z756
dc.gnosis.orcid0000-0003-2916-1708


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