Browsing by Subject "Germanium"
Now showing items 1-6 of 6
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Effect of antimony-doping and germanium on the highly efficient thermoelectric Si-rich-Mg2(Si,Sn,Ge) materials
(2017)Two series of materials (a) Mg2Si0.55-ySn0.4Ge0.05Sby, 0 ≤ y ≤ 0.0175 and (b) Mg2Si0.5875-xSn0.4GexSb0.0125, 0 ≤ x ≤ 0.20 have been developed and studied in terms of structural features and thermoelectric properties/performance. ...
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Article
Effects of Ge concentration, boron co-doping, and hydrogenation on fiber bragg grating characteristics
(2005)In this paper, we compare photosensitivity, refractive-index modulation depth, spectral bandwidth, and excess loss through the inscription of fiber Bragg gratings in unloaded and hydrogen-loaded fibers with low- or ...
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Article
Electronic Structure and Thermoelectric Properties of Pseudoquaternary Mg2Si1-x-ySnxGey-Based Materials
(2014)A theoretical study is presented on complex pseudoternary Bi-doped Mg2Si1-x-ySnxGey materials, which have recently been revealed to reach high thermoelectric figures of merit (ZT) of ∼1.4. Morphological characterization ...
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Article
High thermoelectric figure of merit of Mg2Si 0.55Sn0.4Ge0.05 materials doped with Bi and Sb
(2013)Thermoelectric properties of new Bi- and Sb-doped Mg2Si 0.55Sn0.4Ge0.05 compounds prepared by powder methods were studied in the temperature range 300-823 K. The materials exhibited compositional inhomogeneites consisting ...
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Article
Hot-carrier dynamics in Ge on single picosecond timescales: Comparing Raman and reflectivity experiments with a self-consistent kinetic model
(1989)Through comparisons of picosecond Raman and transient reflection experiments with a comprehensive kinetic model of photo-excited carrier and lattice dynamics in Ge, we demonstrate the ability of these techniques to probe ...
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Article
Spin transport in germanium at room temperature
(2010)Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent ...