High thermoelectric figure of merit of Mg2Si 0.55Sn0.4Ge0.05 materials doped with Bi and Sb
AuthorKhan, A. U.
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Thermoelectric properties of new Bi- and Sb-doped Mg2Si 0.55Sn0.4Ge0.05 compounds prepared by powder methods were studied in the temperature range 300-823 K. The materials exhibited compositional inhomogeneites consisting of Sn-rich and Sn-poor areas. Doping with Bi or Sb had a very strong influence on the thermoelectric properties. A high figure of merit was obtained, with a value ∼1.4 for Bi members and ∼1.2 for Sb members at high temperatures. These values are the highest reported on this system. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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