Browsing by Subject "ION-IMPLANTATION"
Now showing items 1-7 of 7
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Article
Infrared-Spectroscopy and Electrical Characterization of Phosphorus Implanted and Annealed Silicon Layers
(1995)Fourier transform infrared spectroscopy has been carried out in the spectral range of 2.5 to 25 mu m, both in transmission and reflection mode on phosphorus-implanted, non-annealed and annealed silicon layers. Complementary ...
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Article
Optical Spectroscopy on Implanted and Annealed Silicon-Wafers - Plasma Resonance Wavelength
(1994)A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of ...
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Article
Photoluminescence Measurements on Phosphorus Implanted Silicon - Annealing Kinetics of Defects
(1995)
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Photomodulated thermoreflectance investigation of implanted wafers. Annealing kinetics of defects
(1997)
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Article
Photothermal Reflectance Investigation of Implanted Silicon - the Influence of Thermal Annealing
(1995)
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Article
Ultrafast dynamics in phosphorus-implanted silicon wafers: The effects of annealing
(2002)Carrier relaxation in phosphorus-implanted silicon wafers (10(16) P+/cm(2)) annealed at different temperatures ranging from 350 to 1100 degreesC is investigated by near-infrared ultrafast time-resolved reflectivity ...