Optical Spectroscopy on Implanted and Annealed Silicon-Wafers - Plasma Resonance Wavelength
Date
1994ISSN
0021-8979Source
Journal of Applied PhysicsVolume
75Issue
7Pages
3377-3384Google Scholar check
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A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of 0.75-4 mum and 3-25 mum. In the first the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonance has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation of free carriers (implanted impurities) with implantation dose and annealing temperature have been reached.