Browsing by Subject "SEMICONDUCTORS"
Now showing items 1-8 of 8
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Annealing Kinetics of Defects of Ion-Implanted and Furnace-Annealed Silicon Layers - Thermodynamic Approach
(1992)This article reviews some recent results concerning the effects of isochronal annealing and the attempts to model the kinetics of local reconstruction mechanisms of layers with different degrees of inhomogeneity such as ...
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High-temperature photomodulated thermoreflectance measurements on phosphorus implanted and annealed silicon wafers
(2003)Photomodulated thermoreflectance measurements between 300 and 650 K on phosphorus implanted and annealed silicon wafers are reported. The change of the photothermal amplitude and phase as a function of temperature is ...
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Article
Influence of temperature and modulation frequency on the thermal activation coupling term in laser photothermal theory
(2002)A quantitative analysis of the influence of temperature and modulation frequency on the thermal activation coupling term in laser photothermal theory is performed. Until now it was taken for granted that the coupling term ...
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Article
Optical Spectroscopy on Implanted and Annealed Silicon-Wafers - Plasma Resonance Wavelength
(1994)A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of ...
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Photothermal Reflectance Investigation of Implanted Silicon - the Influence of Thermal Annealing
(1995)
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Article
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Raman-Spectroscopy and Spreading Resistance Analysis of Phosphorus Implanted and Annealed Silicon
(1994)Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies ...
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Article
Ultrafast dynamics in phosphorus-implanted silicon wafers: The effects of annealing
(2002)Carrier relaxation in phosphorus-implanted silicon wafers (10(16) P+/cm(2)) annealed at different temperatures ranging from 350 to 1100 degreesC is investigated by near-infrared ultrafast time-resolved reflectivity ...