High-temperature photomodulated thermoreflectance measurements on phosphorus implanted and annealed silicon wafers
Date
2003ISSN
0021-8979Source
Journal of Applied PhysicsVolume
94Issue
11Pages
7121-7127Google Scholar check
Keyword(s):
Metadata
Show full item recordAbstract
Photomodulated thermoreflectance measurements between 300 and 650 K on phosphorus implanted and annealed silicon wafers are reported. The change of the photothermal amplitude and phase as a function of temperature is discussed. Several measurements have been performed on silicon wafers annealed at various temperatures in the range of 300 to 1100degreesC. The activation energy of the local annealing process was also estimated to be 0.17 eV. (C) 2003 American Institute of Physics.