Browsing by Subject "SI"
Now showing items 1-6 of 6
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High-temperature photomodulated thermoreflectance measurements on phosphorus implanted and annealed silicon wafers
(2003)Photomodulated thermoreflectance measurements between 300 and 650 K on phosphorus implanted and annealed silicon wafers are reported. The change of the photothermal amplitude and phase as a function of temperature is ...
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Article
Multi-wavelength Raman probing of phosphorus implanted silicon wafers
(1996)Raman spectroscopy is performed on phosphorus implanted silicon wafers with several excitation laser wavelengths ranging from 458 nm to 752.5 nm. The silicon layers were implanted with various implantation energies and ...
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Article
Photoluminescence and Raman scattering of ion implanted semiconductors. Influence of annealing
(1997)
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Article
Quantitative Photopyroelectric Out-Of-Phase Spectroscopy of Amorphous-Silicon Thin-Films Deposited on Crystalline Silicon
(1991)A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline ...
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Article
Raman-Spectroscopy and Spreading Resistance Analysis of Phosphorus Implanted and Annealed Silicon
(1994)Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies ...
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Article
Ultrafast dynamics in phosphorus-implanted silicon wafers: The effects of annealing
(2002)Carrier relaxation in phosphorus-implanted silicon wafers (10(16) P+/cm(2)) annealed at different temperatures ranging from 350 to 1100 degreesC is investigated by near-infrared ultrafast time-resolved reflectivity ...