Multi-wavelength Raman probing of phosphorus implanted silicon wafers
Date
1996ISSN
0168-583XSource
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and AtomsVolume
117Issue
4Pages
367-374Google Scholar check
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Raman spectroscopy is performed on phosphorus implanted silicon wafers with several excitation laser wavelengths ranging from 458 nm to 752.5 nm. The silicon layers were implanted with various implantation energies and doses, ranging below and over the critical dose of amorphization. A factor kappa, relating the Raman intensity of the implanted samples with that of the pure crystalline silicon is introduced, and used ro correlate the effects of ion implantation at different doses, different implantation energies and various annealing temperatures, on the silicon lattice.