Browsing by Subject "DEFECTS"
Now showing items 1-9 of 9
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High-temperature photomodulated thermoreflectance measurements on phosphorus implanted and annealed silicon wafers
(2003)Photomodulated thermoreflectance measurements between 300 and 650 K on phosphorus implanted and annealed silicon wafers are reported. The change of the photothermal amplitude and phase as a function of temperature is ...
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Infrared-Spectroscopy and Electrical Characterization of Phosphorus Implanted and Annealed Silicon Layers
(1995)Fourier transform infrared spectroscopy has been carried out in the spectral range of 2.5 to 25 mu m, both in transmission and reflection mode on phosphorus-implanted, non-annealed and annealed silicon layers. Complementary ...
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Optical and structural properties of implanted Si wafers: the effects of implantation energy and subsequent isochronal annealing temperature
(2006)We have studied the influence of implantation energy and subsequent isochronal annealing temperature on the optical and structural properties of implanted Si wafers employing a multiwavelength spectroscopic ellipsometer. ...
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Optical Spectroscopy on Implanted and Annealed Silicon-Wafers - Plasma Resonance Wavelength
(1994)A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of ...
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Photoluminescence and Raman scattering of ion implanted semiconductors. Influence of annealing
(1997)
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Photothermal Reflectance Investigation of Implanted Silicon - the Influence of Thermal Annealing
(1995)
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Raman-Spectroscopy and Spreading Resistance Analysis of Phosphorus Implanted and Annealed Silicon
(1994)Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies ...
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