Browsing by Subject "TRANSPORT"
Now showing items 1-7 of 7
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Annealing Kinetics of Defects of Ion-Implanted and Furnace-Annealed Silicon Layers - Thermodynamic Approach
(1992)This article reviews some recent results concerning the effects of isochronal annealing and the attempts to model the kinetics of local reconstruction mechanisms of layers with different degrees of inhomogeneity such as ...
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Infrared-Spectroscopy and Electrical Characterization of Phosphorus Implanted and Annealed Silicon Layers
(1995)Fourier transform infrared spectroscopy has been carried out in the spectral range of 2.5 to 25 mu m, both in transmission and reflection mode on phosphorus-implanted, non-annealed and annealed silicon layers. Complementary ...
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Optical Spectroscopy on Implanted and Annealed Silicon-Wafers - Plasma Resonance Wavelength
(1994)A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of ...
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Article
Photophysics of PbS Quantum Dot Films Capped with Arsenic Sulfide Ligands
(2014)PbS quantum dots (QDs) of different sizes capped with short (NH4)(3)AsS3 inorganic ligands are produced via ligand exchange processes from oleate-capped PbS QDs. The solid-state photophysical properties of the control ...
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Article
Raman-Spectroscopy and Spreading Resistance Analysis of Phosphorus Implanted and Annealed Silicon
(1994)Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies ...
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Article