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Optical Spectroscopy on Implanted and Annealed Silicon-Wafers - Plasma Resonance Wavelength

dc.contributor.authorChristofides, Constantinosen
dc.contributor.authorOthonos, Andreas S.en
dc.contributor.authorBisson, M.en
dc.contributor.authorBousseysaid, J.en
dc.creatorChristofides, Constantinosen
dc.creatorOthonos, Andreas S.en
dc.creatorBisson, M.en
dc.creatorBousseysaid, J.en
dc.date.accessioned2019-12-02T15:30:00Z
dc.date.available2019-12-02T15:30:00Z
dc.date.issued1994
dc.identifier.issn0021-8979
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58618
dc.description.abstractA study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of 0.75-4 mum and 3-25 mum. In the first the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonance has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation of free carriers (implanted impurities) with implantation dose and annealing temperature have been reached.en
dc.sourceJournal of Applied Physicsen
dc.subjectION-IMPLANTATIONen
dc.subjectSEMICONDUCTORSen
dc.subjectTRANSPORTen
dc.subjectDEFECTSen
dc.subjectGAASen
dc.subjectKINETICSen
dc.subjectPROFILESen
dc.subjectREFRACTIVE-INDEXESen
dc.titleOptical Spectroscopy on Implanted and Annealed Silicon-Wafers - Plasma Resonance Wavelengthen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.356097
dc.description.volume75
dc.description.issue7
dc.description.startingpage3377
dc.description.endingpage3384
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>PT: Jen
dc.description.notesTC: 7en
dc.description.notesJ9: J APPL PHYS</p>en
dc.source.abbreviationJ.Appl.Phys.en
dc.contributor.orcidOthonos, Andreas S. [0000-0003-0016-9116]
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.gnosis.orcid0000-0003-0016-9116
dc.gnosis.orcid0000-0002-4020-4660


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