Browsing by Subject "Semiconductor quantum dots"

Article

Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cells

Zervos, Matthew; Vasile, E.; Vasile, E.; Othonos, A. (2017)

Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires have been obtained via the deposition of Pb over Sn:In2O3 nanowires and post growth processing under H2S between 100 C-200 C and 300 C-500 C respectively. The ...

Article

Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation

Zervos, Matthew; Pelekanos, N. T. (2008)

A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...

Article

Current Transport Properties of CuS/Sn:In2O3 versus CuS/SnO2 Nanowires and Negative Differential Resistance in Quantum Dot Sensitized Solar Cells

Zervos, Matthew; Vasile, E.; Karageorgou, E.; Othonos, A. (2016)

The structural, optical, and electrical transport properties of nanowires obtained by the deposition of Cu over Sn doped In2O3 and SnO2 nanowires followed by processing under H2S between 100 and 500°C have been investigated ...

Article

Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers

Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)

Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...

Article

Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires

Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)

Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...

Article

Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires

Zervos, Matthew; Feiner, L.-F. (2004)

The numerical self-consistent solution of the Poisson-Schrodinger equations in cylindrical coordinates for calculating electronic states in the effective mass approximation was implemented. High accuracy and rapid convergence ...

Article

InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates

Zervos, Matthew; Xenogianni, C.; Deligeorgis, G.; Androulidaki, M.; Savvidis, P. G.; Hatzopoulos, Z.; Pelekanos, N. T. (2006)

InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...

Article

Sn:In2O3 and Sn:In2O3/NiS2 Core-Shell Nanowires on Ni, Mo Foils and C Fibers for H2 and O2 Generation

Zervos, Matthew; Leontidis, E.; Tanasǎ, E.; Vasile, E.; Othonos, A. (2017)

Sn:In2O3 nanowires have been grown by the vapor liquid solid mechanism on Si, Ni, Mo, and C fibers. These were used to obtain Sn:In2O3/NiS2 core-shell nanowires by the deposition of 10 nm Ni over the Sn:In2O3 nanowires ...