Browsing by Subject "Si(0 0 1)"
Now showing items 1-6 of 6
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Article
Gallium hydride vapor phase epitaxy of GaN nanowires
(2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
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Article
Gallium hydride vapor phase epitaxy of GaN nanowires
(2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
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Article
An investigation into the conversion of In2O3 into InN nanowires
(2011)Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
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Article
An investigation into the conversion of In2O3 into InN nanowires
(2011)Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
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Article
Synthesis of hybrid polymethacrylate-noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires
(2012)Metal-oxide semiconductor nanowires (NWs) such as ZnO, β-Ga 2O 3 and SnO 2 with diameters of tens of nanometres and lengths of many micrometres have been grown using micellar nanohybrids consisting of methacrylate-based ...
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Article
Synthesis of hybrid polymethacrylate-noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires
(2012)Metal-oxide semiconductor nanowires (NWs) such as ZnO, β-Ga 2O 3 and SnO 2 with diameters of tens of nanometres and lengths of many micrometres have been grown using micellar nanohybrids consisting of methacrylate-based ...