Zervos, Matthew; Bryant, A.; Elliott, M.; Beck, M.; Ilegems, M. (1998)
Silicon (Si) delta- (δ-) doped In0.53Ga0.47As layers were grown by molecular beam epitaxy on InP(001) substrates between 390°C and 575°C. Subbands formed at the δ layer were examined with Hall and Shubnikov-de Haas effect ...