Browsing Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering by Author "Deligeorgis, G."

Now showing items 1-3 of 3

    • Article  

      InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates 

      Zervos, Matthew; Xenogianni, C.; Deligeorgis, G.; Androulidaki, M.; Savvidis, P. G.; Hatzopoulos, Z.; Pelekanos, N. T. (2006)
      InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
    • Article  

      Influence of polarization field on the lasing properties of III-nitride quantum wells 

      Dialynas, G. E.; Deligeorgis, G.; Zervos, Matthew; Pelekanos, N. T. (2006)
      A theoretical investigation of the effect of polarization-induced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a self-consistent solution of Schrödinger-Poisson ...
    • Article  

      Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers 

      Dialynas, G. E.; Deligeorgis, G.; Zervos, Matthew; Pelekanos, N. T. (2008)
      A theoretical investigation of Inx Ga1-x N/GaN single quantum well lasers with x in the range 0.05≤x≤0.3 is carried out via self-consistent Schrödinger-Poisson calculations in the effective mass approximation in order to ...