Browsing Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering by Author "Mahanti, S. D."
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Article
Electronic structure of K 2Bi 8Se 13
Bilc, D. I.; Mahanti, S. D.; Kyratsi, Theodora; Chung, D. Y.; Kanatzidis, M. G.; Larson, P. (2005)K 2Bi 8Se 13 belongs to a class of complex chalcogenides that shows potential for superior thermoelectric performance. This compound forms in two distinct phases, α and β. The β phase, which has several sites with mixed ...
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Article
Local structure and influence of bonding on the phase-change behavior of the chalcogenide compounds K1-xRbxSb5S8
Wachter, J. B.; Chrissafis, K.; Petkov, V.; Malliakas, C. D.; Bilc, D. I.; Kyratsi, Theodora; Paraskevopoulos, K. M.; Mahanti, S. D.; Torbrügge, T.; Eckert, H.; Kanatzidis, M. G. (2007)KSb5S8 and its solid solution analogs with Rb and Tl were found to exhibit a reversible and tunable glass→crystal→glass phase transition. Selected members of this series were analyzed by differential scanning calorimetry ...
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Article
Role of K/Bi disorder in the electronic structure of β -K2 Bi8 Se13
Hoang, K.; Tomic, A.; Mahanti, S. D.; Kyratsi, Theodora; Chung, D. Y.; Tessmer, S. H.; Kanatzidis, M. G. (2009)We have carried out tunneling spectroscopy and first-principles studies for β -K2 Bi8 Se13, a promising thermoelectric material with partially disordered mixed K/Bi sites. The tunneling data, obtained with a scanning ...
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Article
Scanning tunneling microscopy of defect states in the semiconductor (formula presented)
Urazhdin, S.; Bilc, D. I.; Tessmer, S. H.; Mahanti, S. D.; Kyratsi, Theodora; Kanatzidis, M. G. (2002)Scanning tunneling spectroscopy images of (formula presented) doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry ...
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Article
Surface effects in layered semiconductors Bi2Se3 and Bi2Te3
Urazhdin, S.; Bilc, D. I.; Mahanti, S. D.; Tessmer, S. H.; Kyratsi, Theodora; Kanatzidis, M. G. (2004)Scanning tunneling spectroscopy of Bi2Se3 and Bi2Te3 layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure ...