Browsing Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering by Author "Othonos, A."
Now showing items 1-20 of 36
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Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism
Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Luculescu, C. R.; Florini, N.; Komninou, Ph; Kioseoglou, J.; Othonos, A. (2014)Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...
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Carrier dynamics and conductivity of SnO 2 nanowires investigated by time-resolved terahertz spectroscopy
Tsokkou, D.; Othonos, A.; Zervos, Matthew (2012)THz spectroscopy has been applied to investigate the photo-induced and intrinsic conductivity in SnO 2 nanowires using the Drude-Smith model. The refractive index of the nanowires was found to decrease from 2.4 to 2.1 with ...
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Carrier dynamics in InS nanowires grown via chemical vapor deposition
Othonos, A.; Zervos, Matthew (2010)Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
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Carrier dynamics in Β-Ga2O3 nanowires
Othonos, A.; Zervos, Matthew; Christofides, C. (2010)Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
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Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
Othonos, A.; Zervos, Matthew (2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cells
Zervos, Matthew; Vasile, E.; Vasile, E.; Othonos, A. (2017)Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires have been obtained via the deposition of Pb over Sn:In2O3 nanowires and post growth processing under H2S between 100 C-200 C and 300 C-500 C respectively. The ...
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Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
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Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
Zervos, Matthew; Othonos, A. (2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Femtosecond carrier dynamics in In 2O 3 nanocrystals
Othonos, A.; Zervos, Matthew; Tsokkou, D. (2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Gallium hydride vapor phase epitaxy of GaN nanowires
Zervos, Matthew; Othonos, A. (2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
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High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition
Zervos, Matthew; Papageorgiou, P.; Othonos, A. (2010)Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
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Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2
Zervos, Matthew; Othonos, A. (2010)High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...
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An investigation into the conversion of In2O3 into InN nanowires
Papageorgiou, P.; Zervos, Matthew; Othonos, A. (2011)Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
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Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In
Zervos, Matthew; Tsokkou, D.; Pervolaraki, M.; Othonos, A. (2009)Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...
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Article
The nitridation of ZnO nanowires
Zervos, Matthew; Karipi, C.; Othonos, A. (2012)ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
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Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission
Zervos, Matthew; Othonos, A.; Gianetta, V.; Nassiopoulou, A. G. (2016)We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
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Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
Zervos, Matthew; Othonos, A.; Gianneta, V.; Travlos, A.; Nassiopoulou, A. G. (2015)Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
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Sn:In2O3 and Sn:In2O3/NiS2 Core-Shell Nanowires on Ni, Mo Foils and C Fibers for H2 and O2 Generation
Zervos, Matthew; Leontidis, E.; Tanasǎ, E.; Vasile, E.; Othonos, A. (2017)Sn:In2O3 nanowires have been grown by the vapor liquid solid mechanism on Si, Ni, Mo, and C fibers. These were used to obtain Sn:In2O3/NiS2 core-shell nanowires by the deposition of 10 nm Ni over the Sn:In2O3 nanowires ...
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Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
Zervos, Matthew; Othonos, A.; Tsokkou, D.; Kioseoglou, J.; Pavlidou, E.; Komninou, P. (2013)Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...