Browsing Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering by Subject "Gallium arsenide"
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Article
Delta(δ)-doping of semiconductor nanowires
(2013)The electronic sub-band structure of single δ-layers in GaAs nanowires have been determined via the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The spread and sheet ...
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Article
Electronic properties of core-shell nanowire resonant tunneling diodes
(2014)The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP ...
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Article
Magnetic properties of Fe3O4 thin films grown on different substrates by laser ablation
(2007)Magnetite thin films have been grown onto (1 0 0)Si, (1 0 0)GaAs and (0 0 0 1)Al2O3, at substrate temperatures varying from 473 to 673 K, by UV pulsed laser ablation of Fe3O4 targets in reactive atmospheres of O2 and Ar, ...
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Article
Magnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1)
(2007)Magnetotransport properties of magnetite thin films deposited on gallium arsenide and sapphire substrates at growth temperatures between 473 and 673 K are presented. The films were grown by UV pulsed laser ablation in ...