Zervos, Matthew; Othonos, A.; Gianneta, V.; Travlos, A.; Nassiopoulou, A. G. (2015)
Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...