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Carrier dynamics in Β-Ga2O3 nanowires
(2010)
Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
A systematic investigation into the conversion of Β-Ga 2O3 to GaN nanowires using NH3 and H 2: Effects on the photoluminescence properties
(2010)
GaN nanowires (NWs) with a hexagonal wurtzite crystal structure, diameters of 50 nm and lengths of 10 μm have been obtained from postgrowth nitridation of monoclinic Β-Ga2O3 NWs using NH3 between 700-1090 °C. The conversion ...
Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires
(2015)
Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in β-Ga2O3 nanowires converted to β-Ga2O3/Ga2S3 under H2S between 400 to 600 °C. The β-Ga2O3 nanowires exhibited ...
Ultrafast transient spectroscopy and photoluminescence properties of V 2O5 nanowires
(2013)
The properties of V2O5 semiconductor nanowires have been investigated using ultrashort transient absorption spectroscopy in conjunction with time resolved photoluminescence. Femtosecond pulse excitation has been utilized ...