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Ab-initio electronic structure calculations and properties of [SixSn1 − x]3N4 ternary nitrides
(2016)
We carry out ab initio electronic structure calculations of (SixSn1 − x)3N4 using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically ...
Thermal oxidation and facet-formation mechanisms of Si nanowires
(2014)
Silicon nanowires were grown along the [111] direction on Si(001) by the vapor-liquid-solid mechanism using 1 nm Au as a catalyst. They were subsequently oxidized at 900 °C for 60 min, 120 min and 180 min, which lead to ...
Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
(2013)
Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...
Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism
(2014)
Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...