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Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)
Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)
InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
Influence of polarization field on the lasing properties of III-nitride quantum wells
(2006)
A theoretical investigation of the effect of polarization-induced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a self-consistent solution of Schrödinger-Poisson ...