Search
Now showing items 1-3 of 3
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
(2015)
Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
Sulfur doping of M/In2O3 (M=Al,W) nanowires with room temperature near infra red emission
(2015)
We have investigated the growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800°C using Au as a catalyst. We find that the Al is not incorporated into the cubic bixbyite crystal structure of In2O3 ...
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
(2015)
Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...