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Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)
Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
Ultrafast time-resolved spectroscopy of In2 O3 nanowires
(2009)
Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...
Carrier dynamics in Β-Ga2O3 nanowires
(2010)
Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
Carrier dynamics in InS nanowires grown via chemical vapor deposition
(2010)
Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)
We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)
Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires
(2015)
Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in β-Ga2O3 nanowires converted to β-Ga2O3/Ga2S3 under H2S between 400 to 600 °C. The β-Ga2O3 nanowires exhibited ...
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)
Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...