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Magneto-transport properties of NiMnSb thin films on InSb single crystals: Negative giant magnetoresistance
(2007)
In this study we investigated the magneto-transport properties of the ohmic contact between polycrystal-line NiMnSb thin films grown by pulsed laser deposition and n-type degenerate InSb (100) substrates. An unusual negative ...
Magnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1)
(2007)
Magnetotransport properties of magnetite thin films deposited on gallium arsenide and sapphire substrates at growth temperatures between 473 and 673 K are presented. The films were grown by UV pulsed laser ablation in ...
Low-temperature growth of NiMnSb thin films by pulsed-laser deposition
(2002)
We report the growth of thin films of the ferromagnetic half-Heusler alloy NiMnSb by pulsed-laser deposition on Si (111) and polycrystalline InAs substrates. Highly crystalline films are grown using low substrate temperatures ...
Pulsed-laser deposition of NiMnSb thin films at moderate temperatures
(2002)
Thin films of the half-Heusler alloy NiMnSb, which is predicted by band-structure calculations to be a half-metallic ferromagnet, were grown on various substrates (Si and InAs) using pulsed-laser deposition. The growth ...
Matrix assisted pulsed laser evaporation of Mn 12(Propionate) thin films
(2012)
Single molecule magnets are of great interest due to a multitude of potential applications for some of which thin films are required. Traditional physical vapor deposition techniques are not suitable for the deposition of ...
PLD of Fe3O4 thin films: Influence of background gas on surface morphology and magnetic properties
(2006)
Ablation of Fe3O4 targets has been performed using a pulsed UV laser (KrF, λ = 248 nm, 30 ns pulse duration) onto Si(100) substrates, in reactive atmospheres of O2 and/or Ar, with different oxygen partial pressures. The ...
Magnetic properties of Fe3O4 thin films grown on different substrates by laser ablation
(2007)
Magnetite thin films have been grown onto (1 0 0)Si, (1 0 0)GaAs and (0 0 0 1)Al2O3, at substrate temperatures varying from 473 to 673 K, by UV pulsed laser ablation of Fe3O4 targets in reactive atmospheres of O2 and Ar, ...