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An investigation into the conversion of In2O3 into InN nanowires
(2011)
Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
Fabrication, characterization and applications of novel nanoheater structures
(2013)
Nanoheaters are reactive nanostructures that can generate localized heat through controlled ignition. Besides the widely used nanofoil structure with multiple alternative Al-Ni layers, various new nanostructures have been ...
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)
SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
The nitridation of ZnO nanowires
(2012)
ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition
(2010)
Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
(2011)
Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...