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Experimental observation of the de haas–van alphen effect in a multiband quantum-well sample
(1999)
We report measurements of magnetic quantum oscillations (the de Haas–van Alphen effect) in a quantum well containing more than one subband. The Fourier transform of the magnetization oscillations shows the expected frequencies ...
Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells
(1996)
We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the ...
Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)
(1999)
Persistent photoconductivity in 80 angstroms strained GaAs/In0.26Ga0.74As/GaAs quantum wells was investigated by measuring the Shubnikov de Haas and Hall effects at 4.2 K. The quantum wells were grown by molecular beam ...
Surface micro-roughness and transport properties of Si delta-doped GaAs/InxGa1-xAs/GaAs (0.1≤x≤0.25) quantum wells grown by molecular-beam epitaxy on GaAs (001) and GaAs (111)B
(1999)
We investigated the surface quality and electron transport properties of 200 Å GaAs/InxGa1-xAs/GaAs, 0.1≤x≤0.25, quantum well structures grown by molecular-beam epitaxy on GaAs (001) and (111)B, center delta-doped with Si ...
Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575°C by molecular beam epitaxy
(1998)
Silicon (Si) delta- (δ-) doped In0.53Ga0.47As layers were grown by molecular beam epitaxy on InP(001) substrates between 390°C and 575°C. Subbands formed at the δ layer were examined with Hall and Shubnikov-de Haas effect ...