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dc.contributor.authorAlexiadis, A.en
dc.contributor.authorKassinos, Stavros C.en
dc.creatorAlexiadis, A.en
dc.creatorKassinos, Stavros C.en
dc.date.accessioned2019-05-06T12:23:18Z
dc.date.available2019-05-06T12:23:18Z
dc.date.issued2008
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48192
dc.description.abstractThe motion of water in carbon nanotubes (CNT) by numerical procedures is calculated through molecular dynamics (MD) simulation studies. The Lennard-Jones potential is a simple MD simulations technique, which combines together van der Walls attraction and Pauli repulsion to calculate simulations of water and CNTs. MD simulations in the canonical (NVT) or in isothermal-isobaric (NPT) ensemble is performed by coupling the system to a thermostat, ensuring that the average temperature is maintained close to a certain value. The TIP4P and TTM2-F models include placing of negative charge on an additional fictive site located at a certain distance from the oxygen nuclei. All the simulations, independently of the model used, show that water confined at the nanoscale presents certain characteristics that can considerably differ from those of bulk.en
dc.language.isoengen
dc.sourceChemical reviewsen
dc.subjectDynamicsen
dc.subjectAverage temperaturesen
dc.subjectCarbon nanotubesen
dc.subjectLennard-Jones potentialsen
dc.subjectMd simulationsen
dc.subjectMolecular dynamicsen
dc.subjectMolecular simulationsen
dc.subjectMolecular-dynamics simulationsen
dc.subjectNano-scaleen
dc.subjectNegative chargesen
dc.subjectNumerical proceduresen
dc.subjectOxygenen
dc.subjectOxygen nucleusen
dc.subjectPauli repulsionsen
dc.subjectVan der Walls attractionsen
dc.titleMolecular simulation of water in carbon nanotubesen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1021/cr078140f
dc.description.volume108
dc.description.startingpage5014
dc.description.endingpage5034
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidKassinos, Stavros C. [0000-0002-3501-3851]
dc.description.totalnumpages5014-5034
dc.gnosis.orcid0000-0002-3501-3851


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