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dc.contributor.authorAndroulakis, J.en
dc.contributor.authorGardelis, S.en
dc.contributor.authorGiapintzakis, Johnen
dc.contributor.authorBuckle, P. D.en
dc.creatorAndroulakis, J.en
dc.creatorGardelis, S.en
dc.creatorGiapintzakis, Johnen
dc.creatorBuckle, P. D.en
dc.description.abstractWe have grown films of the half-metallic ferromagnet NiMnSb on single crystals of the narrow gap semiconductor InSb by pulsed laser deposition. NiMnSb is a possible candidate for spin injection applications. The film depositions occurred at 200°C. X-ray diffraction studies indicate a high degree of (220) texture and no secondary phases. A saturation magnetization of four Bohr magnetons, μB. at 5 K and coercive fields down to 5 Oe at 300 K indicate the good quality of the films.en
dc.sourceApplied Physics A: Materials Science and Processingen
dc.subjectArc meltingen
dc.subjectFerromagnetic materialsen
dc.subjectFilm growthen
dc.subjectIndium compoundsen
dc.subjectMagnetic random access storage (MRAM)en
dc.subjectNickel compoundsen
dc.subjectPulsed laser depositionen
dc.subjectRandom access storageen
dc.subjectSecondary phasesen
dc.subjectSpin polarized currentsen
dc.subjectTernary systemsen
dc.subjectX ray diffraction analysisen
dc.titleMagnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser depositionen
dc.description.endingpage1213Πολυτεχνική Σχολή / Faculty of EngineeringΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.contributor.orcidGiapintzakis, John [0000-0002-7277-2662]

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