Hall effect study of magnetoresistive perovskite LaNi0.5Co 0.5O3 thin films
SourceMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
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We report on the Hall effect of LaNi0.5Co0.5O 3 magnetoresistive thin films grown on Si(100) substrates by pulsed laser deposition. The Hall resistivity exhibits sign reversals both in varying magnetic field and temperature, which are indicative of a two-carrier type based conduction mechanism. Analysis of the Hall data in the framework of Chamber's two-band conduction model suggests that the low-temperature magnetoresistance most likely arises from an electron mobility enhancement effect. Furthermore, ligand-holes seem to be responsible for the stabilization of the strong ferromagnetic interactions present in the compound. To our knowledge, this is the only other experimental observation, besides X-ray absorption experiments, consistent with ligand-hole ferromagnetism in cobaltites. © 2003 Elsevier B.V. All rights reserved.