dc.contributor.author | Androulakis, J. | en |
dc.contributor.author | Klini, A. | en |
dc.contributor.author | Manousaki, A. | en |
dc.contributor.author | Violakis, G. | en |
dc.contributor.author | Giapintzakis, John | en |
dc.creator | Androulakis, J. | en |
dc.creator | Klini, A. | en |
dc.creator | Manousaki, A. | en |
dc.creator | Violakis, G. | en |
dc.creator | Giapintzakis, John | en |
dc.date.accessioned | 2019-05-06T12:23:20Z | |
dc.date.available | 2019-05-06T12:23:20Z | |
dc.date.issued | 2004 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48211 | |
dc.description.abstract | Polycrystalline LaNi 1_xCo xO 3 (x = 0.5, 0.3) thin films have been deposited on polished Si(lOO) substrates by pulsed laser deposition. The films are grown at 650°C in ambient oxygen pressure of 0.4 mbar with an incident laser fluence of 1.5 J/cm 2 delivered by a KrF excimer laser. The lattice parameters of the as-grown films are slightly larger (0.05%-0.4%) than those of the powders used to prepare the targets. The films exhibit weak texturing along the (012) direction. The low-temperature magnetic properties of the films, i.e. the coercive force, the remanence and the saturation magnetization, are enhanced compared to the powders. Furthermore, the x = 0.3 film exhibits a low, almost temperature-independent resistivity above 200 K [ρ(300 K) ∼ 30 μΩ cm] and thus we propose it as a potential candidate material for electrode applications, e.g. in ferroelectric devices. | en |
dc.language.iso | eng | en |
dc.source | Applied Physics A: Materials Science and Processing | en |
dc.subject | Growth (materials) | en |
dc.subject | Lanthanum compounds | en |
dc.subject | Polycrystalline materials | en |
dc.subject | Magnetization | en |
dc.subject | Nickel compounds | en |
dc.subject | Pulsed laser deposition | en |
dc.subject | Thin films | en |
dc.subject | Cobalt compounds | en |
dc.subject | Deposition | en |
dc.subject | Electrodes | en |
dc.subject | Excimer lasers | en |
dc.subject | Laser fluence | en |
dc.subject | Metal-organic decomposition | en |
dc.subject | Polishing | en |
dc.subject | Saturation (materials composition) | en |
dc.subject | Silicon compounds | en |
dc.subject | Substrates | en |
dc.subject | Temperature-independent resistivity | en |
dc.subject | Texturing | en |
dc.subject | Transition-metal oxides | en |
dc.title | Growth of polycrystalline LaNi 1-xCo xO 3 (x = 0.3, 0.5) thin films on Si(100) by pulsed laser deposition | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1007/s00339-003-2177-6 | |
dc.description.volume | 79 | |
dc.description.startingpage | 671 | |
dc.description.endingpage | 675 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Giapintzakis, John [0000-0002-7277-2662] | |
dc.description.totalnumpages | 671-675 | |
dc.gnosis.orcid | 0000-0002-7277-2662 | |