dc.contributor.author | Androulidaki, M. | en |
dc.contributor.author | Georgakilas, A. | en |
dc.contributor.author | Peiro, F. | en |
dc.contributor.author | Amimer, K. | en |
dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Tsagaraki, K. | en |
dc.contributor.author | Dimakis, M. | en |
dc.contributor.author | Cornet, A. | en |
dc.creator | Androulidaki, M. | en |
dc.creator | Georgakilas, A. | en |
dc.creator | Peiro, F. | en |
dc.creator | Amimer, K. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Tsagaraki, K. | en |
dc.creator | Dimakis, M. | en |
dc.creator | Cornet, A. | en |
dc.date.accessioned | 2019-05-06T12:23:20Z | |
dc.date.available | 2019-05-06T12:23:20Z | |
dc.date.issued | 2001 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48212 | |
dc.description.abstract | The in-situ low temperature preparation of hydrogen passivated Si(111) surfaces has been investigated for GaN growth by rf-plasma source molecular beam epitaxy. The GaN/Si heterostructures were analyzed by transmission electron microscopy, infrared transmittance, photoluminescence (PL) and atomic force microscopy. A silicon nitride layer of 1.5-2.0 nm thickness was formed when GaN was grown directly on a hydrogen passivated Si surface (heated up to 400°C) or on a Si surface with 7 x 7 reconstruction (heated up to 700°C). Growth initiation by Al deposition on a 7 x 7 surface, followed by an AlN nucleation layer, resulted in the best surface morphology and structural quality of 1 μm thick GaN/Si films. | en |
dc.language.iso | eng | en |
dc.source | Physica Status Solidi (A) Applied Research | en |
dc.title | Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1002/1521-396X(200112)188:2<515 | |
dc.description.volume | 188 | |
dc.description.startingpage | 515 | |
dc.description.endingpage | 518 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.description.totalnumpages | 515-518 | |
dc.gnosis.orcid | 0000-0002-6321-233X | |