Low-temperature growth of NiMnSb thin films by pulsed-laser deposition
dc.contributor.author | Giapintzakis, John | en |
dc.contributor.author | Grigorescu, C. | en |
dc.contributor.author | Klini, A. | en |
dc.contributor.author | Manousaki, A. | en |
dc.contributor.author | Zorba, V. | en |
dc.contributor.author | Androulakis, J. | en |
dc.contributor.author | Viskadourakis, Z. | en |
dc.contributor.author | Fotakis, C. | en |
dc.creator | Giapintzakis, John | en |
dc.creator | Grigorescu, C. | en |
dc.creator | Klini, A. | en |
dc.creator | Manousaki, A. | en |
dc.creator | Zorba, V. | en |
dc.creator | Androulakis, J. | en |
dc.creator | Viskadourakis, Z. | en |
dc.creator | Fotakis, C. | en |
dc.date.accessioned | 2019-05-06T12:23:37Z | |
dc.date.available | 2019-05-06T12:23:37Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48362 | |
dc.description.abstract | We report the growth of thin films of the ferromagnetic half-Heusler alloy NiMnSb by pulsed-laser deposition on Si (111) and polycrystalline InAs substrates. Highly crystalline films are grown using low substrate temperatures (190-210°C), without any postdeposition annealing. The structural, magnetic, and transport properties of the films are relatively consistent with those of the bulk NiMnSb used as target, which suggests that thin layers of this material grown by laser ablation could be used in multilayer structures as effective spin-polarized conducting layers. © 2002 American Institute of Physics. | en |
dc.language.iso | eng | en |
dc.source | Applied Physics Letters | en |
dc.subject | InAs | en |
dc.subject | Pulsed laser deposition | en |
dc.subject | Thin films | en |
dc.subject | Deposition | en |
dc.subject | Substrates | en |
dc.subject | Polycrystalline | en |
dc.subject | Pulsed lasers | en |
dc.subject | Vapor deposition | en |
dc.subject | Transport properties | en |
dc.subject | Crystalline films | en |
dc.subject | Conducting layers | en |
dc.subject | Conductive films | en |
dc.subject | Film preparation | en |
dc.subject | Growth of thin films | en |
dc.subject | Half-Heusler alloys | en |
dc.subject | Indium arsenide | en |
dc.subject | Low substrate temperature | en |
dc.subject | Low temperature growth | en |
dc.subject | Multilayer films | en |
dc.subject | Multilayer structures | en |
dc.subject | Post deposition annealing | en |
dc.subject | Si (1 1 1) | en |
dc.subject | Spin-polarized | en |
dc.subject | Thin layers | en |
dc.title | Low-temperature growth of NiMnSb thin films by pulsed-laser deposition | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1063/1.1469211 | |
dc.description.volume | 80 | |
dc.description.startingpage | 2716 | |
dc.description.endingpage | 2718 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Giapintzakis, John [0000-0002-7277-2662] | |
dc.description.totalnumpages | 2716-2718 | |
dc.gnosis.orcid | 0000-0002-7277-2662 |
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