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dc.contributor.authorGiapintzakis, Johnen
dc.contributor.authorLee, W. C.en
dc.contributor.authorRice, J. P.en
dc.contributor.authorGinsberg, D. M.en
dc.contributor.authorRobertson, I. M.en
dc.contributor.authorWheeler, R.en
dc.contributor.authorKirk, M. A.en
dc.contributor.authorRuault, M.-O.en
dc.creatorGiapintzakis, Johnen
dc.creatorLee, W. C.en
dc.creatorRice, J. P.en
dc.creatorGinsberg, D. M.en
dc.creatorRobertson, I. M.en
dc.creatorWheeler, R.en
dc.creatorKirk, M. A.en
dc.creatorRuault, M.-O.en
dc.date.accessioned2019-05-06T12:23:37Z
dc.date.available2019-05-06T12:23:37Z
dc.date.issued1992
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48363
dc.description.abstractAn enhancement in Jc of YBa2Cu3O7-x single crystals in a magnetic field is observed after irradiation with 1-MeV electrons. Typically, a factor-of-2 increase in Jc is deduced from magnetic hysteresis loops at 10 K and 1 T with Hc. This enhancement is about 1/2 of that produced by proton and neutron irradiations under similar measurement conditions. In situ transmission- electron-microscopy studies found no visible defects induced by electron irradiation, which means that point defects or small clusters (of size <2 nm) are responsible for the extra pinning. Annealing studies suggest that effective pinning centers for Hc do not include oxygen vacancies in the Cu-O chains. Based on calculations of cross sections for displacements on the different sublattices, and in conjunction with the results of a Jc calculation by Kes, we suggest that the most likely pinning defect is the displacement of a Cu atom from the CuO2-plane sites. © 1992 The American Physical Society.en
dc.language.isoengen
dc.sourcePhysical Review Ben
dc.titleProduction and identification of flux-pinning defects by electron irradiation in YBa2Cu3O7-x single crystalsen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1103/PhysRevB.45.10677
dc.description.volume45
dc.description.startingpage10677
dc.description.endingpage10683
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidGiapintzakis, John [0000-0002-7277-2662]
dc.description.totalnumpages10677-10683
dc.gnosis.orcid0000-0002-7277-2662


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